SI system
英 [ˌes ˈaɪ ˈsɪstəm]
美 [ˌes ˈaɪ ˈsɪstəm]
网络 公制; 国际单位制; 尽可能使用公制单位; 量以公制单位
双语例句
- The SI system therefore takes the ampere as one of its fundamental units.
因此，si制取安培作为它的基本单位之一。 - Aside from the SI system, other systems such as CGS and MKS are in use in the study of physics.
在物理学研究中除了国际单位制外，其它如厘米？克？秒和米？千克？秒单位制也使用。 - The unit of work and energy in the SI system is the joule ( J).
在国际单位制（SI）中，功和能的单位是焦耳（J）。 - In the most widespread SI system in flowering plants, both compatible and incompatible pollen tubes grow down the style.
在有花植物最广泛的配子体SI系统中，亲和及不亲和的花粉管都生长到花柱中。 - In this SI system, the flowers of different plants usually take one of two or three different forms and the site of recognition can differ between the forms of one species.
在异态SI系统中，不同植株的花通常呈现一种、两种或三种不同的形态，并且识别的位点在同种植物的不同类型间存在差异。 - Make sure that the units you use are consistent and clear, and that you comply with the SI system.
确定你所用的单位统一、清楚，并且遵循国际单位制（SI）。 - In the sporophytic SI system of the cabbage family, the S gene is actually two linked loci, one producing a glycoprotein and the other a receptor kinase.
十字花科孢子体SI系统的s基因确实是连锁的两个基因座，一个合成糖蛋白，另外一个合成受体&激酶。 - Even if one is committed to the SI system, there is no objection to such units as grams, centimeters, millimeters, etc.
即使责成人们使用SI体系，而象克、厘米、毫米等这样的单位也没什么。 - At present, the substantial amount is called the elementary quantity in SI system.
当前，国际单位制（SI）以物质的量作为基本量，本文特对其概念进行讨论，并提出了与之配套的计算方法。 - Study on Quality Improvement of Gallium Diffusion is SiO_2/ Si System and Improvement of Electron Device Performance
采用SiO2／Si系扩镓提高扩散质量和器件性能的研究 - A interface diffusion and reaction kinetic study of ti/ si system
Ti/Si（100）体系界面扩散反应动力学研究 - Controllable dopant of P-type impurity Ga in Si can be real-ized by open-tube mode and SiO_2/ Si system.
采用开管方式和SiO2/Si系统，实现了P型杂质Ca在硅中的可控制掺杂。 - Gallium Doping Effect in Bare Silicon System and SiO_2/ Si System
镓在裸Si系和SiO2/Si系掺杂效应 - Observation and Analysis on Micro Structure of Fe Mn Si System Sintered Steel
Fe-Mn-Si系烧结钢显微组织的观察与分析 - Thermally stimulated current ( TSC) technique has been applied to study the deep-level of silicon surface of B+ implanted SiO_2& Si system.
本文用MOS热激电流（TSC）技术研究了B~+注入SiO2～Si系统硅表面的深能级。 - The impurity diffusion in the Poly-Si/ SiO_2/ Si system is analysed.
本文对Poly-Si/SiO2/S1（多晶硅/二氧化硅/硅）三层系统的扩散进行了分析。 - The effects of above conditions, high k dielectric/ Si system and the selection of SOI as the substrate materials on the total dose radiation effects were reviewed.
综述了上述条件、高k介质/硅系统以及选择SOI材料作为衬底材料对MOS器件总剂量辐射效应的影响。 - Thermal Stability of Al/ TiSi_2/ Si System Schottky Diodes
Al/TiSi2/Si系统与肖特基势垒二极管的热稳定性 - Study of the effective work function difference and interface characteristics of al/ sio_xn_y/ si system
Al－SiOxNy－Si系统有效功函数差和界面特性的研究 - In this paper we have discussed all sorts of origins and characteristics of structural defects in the SiO_2 Si system, and analyzed in detail the interaction mechanism of Gold and distorted center of SiO_2 Si interface.
本文讨论了SiO2Si体系中各种结构缺陷的起因与特征，并详细地分析了金与SiO2Si界面不规则中心的互作用机理。 - The equations of the thermodynamic properties for ammonia in SI System are compiled and developed.
本文汇集和推导了SI制的氨的热力性质方程式。 - In this paper, a new system was developed to study surface electromigration. Scanning Auger microprobe ( SAM) was used in situ to characterize the electromigration behavior in Au-Ag/ Si system.
应用自建的超高真空原位装置及扫描俄歇微探针（SAM）技术，研究了AU－Ag／Si体系的表面电迁移现象。 - The Effect of Tungsten Barrier Layer on Thermal Stability of Ai/ TiSi_2/ Si System
W阻挡层对Al/TiSi2/Si接触系统热稳定性的影响 - The investigation of ion beam mixing and phase transformation in Ni/ Si system
Ni/Si体系离子束混合及相变研究 - Ni& Si system intermetallics as a new and potential high temperature structure and function material is valued and researched by many scholars.
镍硅系金属间化合物作为潜在的新型高温结构材料和功能材料，已得到国内外材料科技工作者广泛的重视和研究。 - Research on the Microstructure and Mechanical Property of Metallic Silicide in Mo-Si System
Mo-Si系金属硅化物组织与机械性能的研究 - These results show that the ion beam mixing mechanism of Mo/ Si system is not vacancy diffusion and intra-cascade interstitial diffusion, and the thermal spike model also does not apply.
结果表明，以前的空位扩散机制、单级联间隙原子扩散机制和热峰模型都不能解释Mo/Si体系的离子束混合。 - Study of Annealing Process of Ti/ SiO_2 ( thin)/ Si System in Nitrogen with Trace of Oxygen
Ti/SiO2（薄）/Si体系在微量氧存在的氮气中退火过程的研究 - This paper firstly to Japan by housing industrialization development course and the present situation of system research, summarizes Japanese in the process of the development of housing industry standardization and components experience; Analyzes the SI system and residential hexahedral concept.
本文首先通过对日本住宅产业化发展历程和现状的系统研究，总结了日本住宅产业化发展过程中标准化、部件化的经验；分析了日本SI体系和住宅六面体的概念。 - Each node in SI system is considered simple, asynchronous and homogeneous.
智能群体中的每个个体都被认为是简单的，同步的及同构的。